Photoreflectance investigations of a donor-related transition in AlGaN/GaN transistor structures

وابستگی انرژی گذارهای اپتیکی در نانوساختارهای چاههای کوانتومی GaN/AlGaN به پهنای سد و چاه کوانتومی

Internal polarizations field which take place in quantum structures of group-III nitrides have an important consequence on their optical properties. Optical properties of wurtzite AlGaN/GaN quantum well (QW) structures grown by MBE and MOCVD on c-plane sapphire substrates have been investigated by means of photoluminescence (PL) and time resolved photoluminescence (TRPL) at low-temperature. PL ...

Effects of hydrostatic pressure and temperature on the AlGaN/GaN High electron mobility transistors

In this paper, drain-source current, transconductance and cutoff frequency in AlGaN/GaN high electron mobility transistors have been investigated. In order to obtain parameters of exact AlGaN/GaN high electron mobility transistors such as electron density, the wave function, band gap, polarization charge, effective mass and dielectric constant, the hydrostatic pressure and temperature effects a...

investigations of GaN surface quantum well in AlGaN/GaN transistor heterostructures by contactless electroreflectance spectroscopy

بهره کوانتومی آشکارساز نقطه کوانتومی هسته/ پوسته GaN/AlGaN

 In this work, oscillator strength and quantum efficiency of new spherical GaN/AlGaN quantum dot was investigated. In order to obtain these parameters, at first, Schrödinger equation is solved in GaN/AlGaN spherical coordinate system in effective mass approximation, and energy level, wave function and transition matrix element of the parameter are obtained. The results show that oscillator stre...

Raman Scattering and PL Studies on AlGaN/GaN HEMT Layers on 200 mm Si(111)

The crystalline quality of the AlGaN/GaN high electron mobility transistor (HEMT) structure grown on a 200 mm silicon substrate has been investigated using UV-visible microRaman scattering and photoluminescence (PL). The visible Raman scattering probes the whole nitride stack with the Si substrate and shows the presence of a small component of residual in-plane stress in the thick GaN buffer re...